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Si5519DU
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
20
15
V GS = 5 V thr u 3.5 V
V GS = 3 V
3.0
2.5
2.0
1.5
10
1.0
V GS = 2.5 V
5
0
V GS = 2 V
0.5
0.0
T J = 125 °C
T J = 25 °C
T J = - 55 °C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.20
0.16
V DS - Drain-to-So u rce V oltage ( V )
Output Characteristics
1000
8 00
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics
0.12
0.0 8
0.04
0.00
V GS = 2.5 V
V GS = 4.5 V
600
400
200
0
C rss
C oss
C iss
0
5
10
15
20
0
4
8
12
16
20
I D - Drain C u rrent (A)
On-Resistance vs. Drain Current and Gate Voltage
10
1.6
V DS - Drain-to-So u rce V oltage ( V )
Capacitance
8
I D = 6.7 A
1.4
V GS = 4.5 V ,
I D = 5 A
V DS = 10 V
6
4
2
0
V GS = 16 V
1.2
1.0
0. 8
0.6
V GS = 2.5 V ,
I D = 5 A
0
2
4
6
8
10
12
- 50
- 25
0
25
50
75
100
125
150
www.vishay.com
4
Q g - Total Gate Charge (nC)
Gate Charge
T J - J u nction Temperat u re (°C)
On-Resistance vs. Junction Temperature
Document Number: 74406
S-81449-Rev. B, 23-Jun-08